DatasheetsPDF.com

3DD8A

Silicon NPN Power Transistor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(T...

Inchange Semiconductor

Download 3DD8A Datasheet

Similar Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100A NPN Transistor - INCHANGE
3DD100B NPN Transistor - INCHANGE
3DD100C NPN Transistor - INCHANGE
3DD100D NPN Transistor - INCHANGE
3DD100E NPN Transistor - INCHANGE
3DD101 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD101A Power Transistor - SJ
3DD101A Silicon NPN Power Transistor - Inchange Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)