3DD15

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W 3DD15 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 60V; IB=0 ICBO Collector Cutoff Current VCB= 80V; IE=0 hFE DC Current Gain IC= 2A; VCE= 10V tf Fall Time IC= 3A; IB1= 0.2A, IB2= -0.3A, 3DD15 ...