isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
10
A
ID(puls)
Pulse Drain Current
40
A
Ptot
Total Dissipation@TC=25℃
70
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK2407
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2407
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 1mA VDS= 10V; ID=1mA IS=10A; VGS=0 VGS= 10V; ID= 6A VGS= ±30V;VDS= 0 VDS= 450V; VGS= 0 VDS=20V; VGS=0V; fT=1MHz
VGS=10V; ID=5A; VDD=200V; RL=33.3Ω
MIN TYPE MAX UNIT
450
V
2.0
3.0
V
1.5
V
0.55 0.75 Ω
±100 nA
1.0 mA
1500
75
pF
220
60
25 ns
60
230
NOTICE:
ISC reserves the rights to make...