2SK2328

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A ID(puls) Pulse Drain Current 28 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK2328 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2328 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IS=7A; VGS=0 VGS= 10V; ID= 4A VGS= ±25V;VDS= 0 VDS= 550V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz VGS=10V; ID=4A; RL=7.5Ω MIN TYPE MAX UNIT 650 V 2.0 3.0 V 0.95 V 1.0 1.4 Ω ±10 µA 250 µA 1180 50 pF 265 50 15 ns 45 105 NOTICE： ISC reserves the rights to...