isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
17
A
ID(puls)
Pulsed Drain Current
68
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
35
℃/W
2SK2257
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
2SK2257
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward on-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 1mA VDS= VGS; ID=1mA IF= 17A ;VGS= 0 VGS= 10V; ID= 9A VGS= ±30V;VDS= 0 VD...