isc N-Channel MOSFET Transistor
2SK1917
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V...
isc N-Channel MOSFET
Transistor
2SK1917
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·UPS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
250
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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isc N-Channel Mosfet
Transistor
2SK1917
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
250
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.5
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
0.3
0.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
500
µA
Ciss Input capacitance
570
860
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
70
110
pF
Coss Output capacitance
140
210
tr
Rise time
ton
Turn-on time
tf
Fall time
...