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CMP80N03

Cmos

N-Ch 30V Fast Switching MOSFETs

CMB80N03 /CMP80N03 General Description The 80N03 is N-ch MOSFETs with extreme high cell density , which provide excellen...


Cmos

CMP80N03

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Description
CMB80N03 /CMP80N03 General Description The 80N03 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Features Simple Drive Requirement Fast Switching Low On-Resistance N-Ch 30V Fast Switching MOSFETs Product Summery BVDSS 30V RDSON 5.2m ID 80A Applications LED POWER CONTROLLER DC-DC & DC-AC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS TO263 / TO220 Pin Configuration Absolute Maximum Ratings GD S TO-263 (CMB80N03) Symbol VDS VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current 1 Continuous Drain Current 1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range G DS TO-220 (CMP80N03) Rating 30 20 80 50 220 400 50 120 -55 to 175 -55 to 175 Thermal Data Symbol R JA R JC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-case Typ. ----- Max. 62 1.5 Units V V A A A mJ A W Unit /W /W 1 CMB80N03 /CMP80N03 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage BVDSS TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions VGS=0V , ID=250uA Reference to 25 ,...




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