isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable for switching
regulator, DC–DC convertor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK642
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= 10V; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=5A
VSD
Diode Forward Voltage
IF= 10A; VGS=0
IGSS
Gate Source Leakage Current
VGS= ±16V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
2SK642
MIN TYP. MAX UNIT
500
V
2.0
4.0
V
0.7
1.0
Ω
1.0
V
±10 uA
250 uA
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