2SK603

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed isc Product Specification 2SK603 DESCRIPTION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 800 ±20 V V 3A 80 150 -55~150 W ℃ ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK603 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 1mA VGS= 15V; ID= 3A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS=0 VSD Forward On-Voltage IS= 3A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=.1A; RL=50Ω toff Turn-off time MIN TYP MAX UNIT 800 V 1.0 5.0 V 5.0 Ω ±100 nA 1 μA 1.0 1.3 V 60 90 ns 80 120 ns 50 65 ns 130 175 ns · isc website：www.iscsemi.cn 2 isc & i...