isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
ID(puls)
Pulse Drain Current
15
A
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK2185
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2185
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VSD
Forward On-Voltage
IS=2.5A; VGS=0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
ton
Turn-on Time
toff
Turn-off Time
VDS=10V; VGS=0V; fT=1MHz
VGS=10V;ID=2.5A; RL=60Ω
MIN TYPE MAX UNIT
500
V
2.5
3.0
3.5
V
1.5
V
1.1
1.5
Ω
±100 nA
250
µA
580
45
pF
140
55
90
ns
110
170
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