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GAP3SHT33-CAU

GeneSiC
Part Number GAP3SHT33-CAU
Manufacturer GeneSiC
Description Silicon Carbide Power Schottky Diode
Published Jun 25, 2016
Detailed Description Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Posit...
Datasheet PDF File GAP3SHT33-CAU PDF File

GAP3SHT33-CAU
GAP3SHT33-CAU

Overview
Silicon Carbide Power Schottky Diode Features • 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.
3 A = 20 nC Advantages • Improved circuit efficiency (Lower overall cost) • Significantly reduced switching losses compare to Si PiN diodes • Ease of paralleling devices without thermal runaway • Smaller heat sink requirements • Low reverse recovery current • Low device capacitance Die Size = 1.
39 mm x 1.
39 mm Applications • Down Hole Oil Drilling, Geothermal Instrumentation • High Voltage Multipliers • Military Power S...


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