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GAP3SHT33-CAL

GeneSiC

Silicon Carbide Power Schottky Diode


Description
Silicon Carbide Power Schottky Diode Features 3300 V Schottky rectifier 210 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages Improved circuit efficiency (Lower overall cost) Signific...



GeneSiC

GAP3SHT33-CAL

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