2SD861

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Power Dissipation- : PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD861 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 1.5A ; VCE= 10V ICEO Collector Cutoff Current VCE= 150V; IB= 0 ICES Collector Cutoff Current VCE= 350V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 10V hFE-2 DC Current Gain IC= 1.5A ; VCE= 10V 2SD861 MIN TYP. MAX UNIT 250 V 1.0 V 1.5 V 1.0 mA 1.0 mA 1.0 mA 40 250 10  hFE-1 Classifications R Q P 40-90 70-150 120-250 NOTICE： ISC reserves the rights to mak...