isc Silicon NPN Power Transistor
2SD1340
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Spee...
isc Silicon
NPN Power
Transistor
2SD1340
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
3.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
10
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SD1340
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1500
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
40
130 mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
3
MHz
VECF
C-E Diode Forward Vo...