2SD1314

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION ·High DC Current Gain :hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-peak IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 600 V 450 V 6 V 15 A 30 A 1.0 A 150 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 0.4A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.4A 2.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 15A; VCE= 5V 100 COB Output ...