isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1173
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Mi...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1173
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 4.0V(Max.)@ IC= 3.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
4
A
ICP
Collector Current- Peak
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
6
A
70
W
130
℃
Tstg
Storage Temperature Range
-65~130
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1173
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Base Cutoff Current
hFE
DC Current Gain
IC= 3.0A; IB= 1.0A VCB=750V; IE= 0 VCB=1500V; IE= 0 IC= 3A; VCE= 10V
4.0
V
1.5
V
50 uA
1
mA
6
20
VECF C-E Diode Forward Voltage
IF= 4A
2.5
V
Switching Times
tstg
Storage Time
tf
Fall Time
IC = 3A,IB1 = ...