2SC5353

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ IC= 1.2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak tp<5ms 5 A IB Base Current-Continuous Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Ti Junction Temperature 1 A 25 W 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector -Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector - Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.2A; IB= 0.24A VBE(sat) Base-Emitter Saturation Voltage IC= 1.2A; IB= 0.24A ICBO Collector Cutoff Current VCE=720V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 1mA; VCE= 5V hFE-2 DC Current Gain...