2SC4901

isc Silicon NPN RF Transistor DESCRIPTION · High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz · High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·UHF / VHF wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4901 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product | S21e |2 Power gain NF Noise figure CONDITIONS IC= 1uA ; IE= 0 VCB= 10V ; IE= 0 VEB= 1V; IC= 0 IC= 20mA ; VCE= 5V VCB=10V,IE=0mA, f=1MHz VCE=5V，IC=20mA VCE=5V,IC=5mA, f=0.9GHz VCE=5V,IC=20mA,f=0.9GHz VCE=5V, IC=5mA, f=0.9GHz  hFEClassifications A B C D E 60-100 90-140 130-180 170-250 250-300 2SC4901 MIN TYP. MAX UNIT 15 V 0.1 uA 0.1 uA 60 150 300 0.65 1 pF 7 9 GHz 13.3 dB 13.5 d...