2SC4249

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4249 DESCRIPTION ·Low Noise NF = 2dB TYP. @ f = 200MHz ·High Gain Gpe = 24dB TYP. @ f = 200MHz APPLICATIONS ·TV VHF RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 20 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4249 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 0.1 μA 30 V hFE DC Current Gain IC= 2mA ; VCE= 10V 60 300 fT Current-Gain—Bandwidth Product Cre Feed-Back Capacitance Gpe Power Gain NF Noise Figure IC= 2mA ; VCE= 10V 400 650 MHz VCB= 10V; IE= 0; f= 1.0MHz 0.35 0.5 pF 20 24 28 dB VCC= 12V;VAGC= 1.4V;f= 200MHz 2 3.2 dB isc website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4249 isc website：www.iscsemi.cn 3 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product ...