2SC3996

isc Silicon NPN Power Transistor DESCRIPTION ·High Switching Speed ·High Breakdown Voltage : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 35 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3996 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3996 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 40 hFE-2 DC Current Gain IC= 12A; VCE= 5V 4 8 tstg Storage Time tf Fall Time IC= 12A, IB1=2.4A; IB2= -4.8A 3.0 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the...