2SC3789

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3789 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Complement to Type 2SA1479 APPLICATIONS ·High-definition CRT display. ·Color TV chroma output, high breakdown voltage drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.2 A 7 W 1.5 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3789 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 20mA; IB= 2mA VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 10mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V COB Output Capacitance IE= 0; VCB= 30V, ftest= 1MHz MIN TYP. MAX UNIT 300 V 300 V ...