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2SC3585 Dataheets PDF



Part Number 2SC3585
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3585 Datasheet2SC3585 Datasheet (PDF)

isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN.

  2SC3585   2SC3585



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isc Silicon NPN RF Transistor DESCRIPTION ·Collector Current IC= 35mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min) ·High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz) ·Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3585 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademar isc Silicon NPN RF Transistor 2SC3585 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter-Base Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product Cre Output feedback capacitance | S21e |2 Power gain NF Noise factor CONDITIONS IC= 1uA ; IE= 0 VCB= 10V; IE= 0 VEB= 1V; IE= 0 IC= 10mA ; VCE= 6V VCE=6V,IC=10mA,f=1GHz VCB=10V,IE=0mA,f=1MHz VCE=6V,IC=10mA,f=2GHz VCE=6V,IC=5mA,f=2GHz MIN TYP. MAX UNIT 20 V 0.1 μA 0.1 μA 50 150 300 10 GHz 0.65 pF 5.5 dB 2.5 dB  hFE Classifications step A B C D E label R43 R44 R45 hFE 60-100 90-140 130-180 170-250 250-300 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademar .


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