Document
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547A
DESCRIPTION ·High Current-Gain—Bandwidth Product
fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA
APPLICATIONS ·Designed for TV tuner, UHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
IB Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
20 V
12 V
3V
30 mA
15 mA
0.15 W
125 ℃
-55~125
℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
ICBO Collector Cutoff Current IEBO Emitter Cutoff Current
VCB= 10V; IE= 0 VEB= 1V; IC= 0
0.1 μA 1.0 μA
hFE DC Current Gain
IC= 5mA ; VCE= 10V
35 130
fT Current-Gain—Bandwidth Product COB Output Capacitance
IC= 10mA ; VCE= 10V IE= 0 ; VCB= 10V; f= 1.0MHz
34
GHz
1.05 1.35 pF
rbb’ • CC Base Time Constant
IC= 5mA ; VCB= 10V;f= 30MHz
4.5 10
ps
isc website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547A
isc website:www.iscsemi.cn
3
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3547A
isc website:www.iscsemi.cn
4
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