2N6770

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6770 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive requirements APPLICATIONS designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 12 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2N6770 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.75A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 12A; VGS= 0 MIN MAX UNIT 500 V 24V 0.4 Ω 100 nA 1 mA 1.6 V isc website：www.iscsemi.cn 2 isc & iscsemi is...