D1275

Power Transistors 2SD1275, 2SD1275A www.DataSheet4U.com Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB0949 and 2SB0949A 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 ■ Features High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) 2SD1275 VCBO 2SD1275A 60 80 V Collector-emitter voltage 2SD1275 VCEO (Base open) 2SD1275A 60 80 V Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg 5 2 4 35 2.0 150 −55 to +150 V A A W °C °C ■ Electrical Characteristics Ta = 25°C ± 3°C φ 3.1±0.1 14.0±0.5 Solder Dip (4.0) 1.4±0.1 0.8±0.1 1.3±0.2 0.5+–00..12 2.54±0.3 5.08±0.5 1: Base 2: Collector 123 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection B C E Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SD1275 VCEO IC = 30 mA, IB = 0 60 V (Base open) 2SD1275A 80 Base-emitter voltage Collector-base cutoff current (Emitter open) 2SD1275 2SD1275A VBE ICBO Collector-emitter cutoff current (Base open) 2SD1275 ICEO 2SD1275A Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter satu...