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2SA2140

Part Number	2SA2140
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 22, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Lineari...
Datasheet	2SA2140 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.
5 A ICP Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ...

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