2SA1444

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -15 A ICM Collector Current-Pulse -30 A IB Base Current-Continuous -7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1444 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -8.0A ; IB= -0.8A, L= 1mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -0.6A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A VBE(sat)-2 Base-Emitter Saturation Voltage...