2SA1395

isc Silicon PNP Power Transistor 2SA1395 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -1A ·High Switching Speed ·Complement to Type 2SC3567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1A; IB= -0.1A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -100V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V  hFE-2 Classifications M L K 40-80 60-120 100-200 2SA1395 MIN MAX UNIT -100 V -0.6 V -1.5 V -10 μA -10 μA 40 40...