isc Silicon PNP Power Transistor
2SA1214
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM...