2SA1173

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -140 -5 -0.05 2 150 -55~150 V V A W ℃ ℃ isc Product Specification 2SA1173 isc website：www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1173 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -20mA; IB= -2mA ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 fT DC Current Gain Current-Gain—Bandwidth Product IC= -10mA ; VCE= -10V IC= -10mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -10V,ftest= 1MHz MIN TYP. MAX UNIT -0.6 V -1 V -0.1 μ A -1 μ A 90 400 80 MHz 2.5 pF isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark ...