CNW83

WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity. 6 FEATURES Wide body DIL encapsulation, with a pin distance of 10.16 mm. Minimum creepage distance 10 mm. High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated circuits. High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)). Minimum 2 mm isolation thickness between emitter and detector. (CNW84/85 only). An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum. Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only). Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only). UL recognized (File # E90700) CNW82 CNW83 1 CNW84 6 CNW85 1 SCHEMATIC 1 NC 6 1 6 2 52 5 3 NC...