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2N5551

Part Number	2N5551
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 22, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 ...
Datasheet	2N5551 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max.
300 mA) ·High voltage (max.
160 V) ·Complements to 2N5401.
isc Product Specification 2N5551 APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 0.
3 A ICM Collector Current-Peak 0.
6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta<50℃ 0.
1 A 0.
63 W J Junction Temperature Tstg Storage Temper...

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