2N5497

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5497 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEV VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 90 90 80 70 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 7 IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 1.8 50 150 Tstg Storage Temperature Range -65~150 UNIT V V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2.5 ℃/W 70 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5497 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V VCE(sat) Collec...