2N5401

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5551. isc Product Specification 2N5401 APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Peak 0.6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta<50℃ 0.1 A 0.63 W J Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5551 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 10mA; IB= 1mA IC= 50mA; IB= 5mA VCB= 120V; IE= 0 VCB= 120V; IE= 0 Ta = 100 ℃ VEB= 4V; IC= 0 IC= 1mA ; VCE= 5V hFE DC Current Gain IC= 10mA ; VCE= 5V hFE DC Current Gain IC= 50mA ; VCE= 5V fT Current-Gain...