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2N2219A

Part Number	2N2219A
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 22, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Brea...
Datasheet	2N2219A PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.
8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS ·Designed for general-purpose switching and linear amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2219A VALUE 75 40 6 0.
8 0.
2 0.
8 150 -65~150 UNIT V V V ...

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