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HY3210P

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N-Channel Enhancement Mode MOSFET


Description
HY3210P/M/B/PS/PM Features 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application Power Management for Inverter Systems. ...



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HY3210P

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