KTC4373

J B EC SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Voltage : VCEO=120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTA1661. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 120 Collector-Emitter Voltage VCEO 120 Emitter-Base Voltage VEBO 5 Collector Current IC 800 Base Current IB 160 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTC4373 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W KTC4373 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Lot No. Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification O:80 160, Y:120 240 TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, IE=0, ...