SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
FEATURES High DC Cu...
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
FEATURES High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). Suitable for Driver Stage of Small Motor. Complementary to KTA1298. Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCBO VCEO VEBO
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 35 30 5 800 160 200 150
-55 150
UNIT V V V mA mA mW
KTC3265
EPITAXIAL PLANAR
NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking
hFE Rank
Type Name
E
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO
VCB=30V, IE=0
IEBO
VEB=5V, IC=0
V(BR)CEO
VEB=10mA, IB=0
V(BR)EBO
IE=1mA, IC=0
hFE(1) (Note) VCE=1V, IC=100mA
hFE(2)
VCE=1V, IC=800mA
VCE(sat)
IC=500mA, IB=20mA
VBE VCE=1V, IC=10mA
fT VCE=5V, IC=10mA, f...