KTD718

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 45ᴕ50W Audio Frequency Amplifier Output Stage. ᴌComplementary to KTB688. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 120 120 5 10 1 80 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ E KTD718 TRIPLE DIFFUSED NPN TRANSISTOR AQ B K F I J GH C D d PP L T 1 23 1. BASE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX H 9.0 I 4.5 MJ 2.0 K 1.8 MAX L 20.5+_ 0.5 M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2 T 0.6+0.3/-0.1 TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification R:55ᴕ110, O:80ᴕ160 TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1A IC=6A, IB=0.6A VCE=5V, IC=5A VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz MIN. - 120 55 - TYP. 12 170 MAX. 10 10 160 2.0 1.5 - UNIT ỌA ỌA V V V MHz pF 1997. 1. 25 Revision No : 0 1/2 COLLECTOR CURRENT IC (A) KTD718 I C - VCE 12 10 400 3...