KTC1006

SEMICONDUCTOR TECHNICAL DATA CB TRANSCEIVER TX DRIVER APPLICATION. FEATURES ᴌRecommended for Driver Stage Application of AM 4W Transmitter. ᴌHigh Power Gain. ᴌWide Area of Safe Operation. MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Colletor Power Dissipation Junction Temperature VCBO VCER VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 80 80 5 800 -800 1 150 -55ᴕ150 UNIT V V V mA mA W ᴱ ᴱ O D KTC1006 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 H K L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO ICER IEBO hFE VCE(sat) VBE fT Collector Output Capacitance Cob TEST CONDITION VCB=60V, IE=0 VCE=80V, RBE=220ή VEB=5V, IC=0 VCE=2V, IC=150mA IC=500mA, IB=20mA VCE=2V, IC=500mA VCE=10V, IC=100mA VCB=10V, IE=0, f=1MHz MIN. - 100 - TYP. 0.9 150 12 MAX. 0.1 0.1 0.1 0.7 - UNIT ỌA ỌA ỌA V V MHz pF 1994. 5. 20 Revision No : 0 1/2 COLLECTOR CURRENT IC (mA) KTC1006 I C - VCE 2k ...