KTB817B

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Output Stage. KTB817B TRIPLE DIFFUSED PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -160 -140 -6 -12 -15 100 150 -55 150 UNIT V V V A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE (1) (Note) hFE 2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Transition Frequency fT Output Capacitance Cob Turn On Time ton Fall Time tf Storage Time tstg Note : hFE(1) Classification O:60 120, Y:100 200 TEST CONDITION VCB=-80V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-1A VCE=-5V, IC=-6A IC=-5A, IB=-0.5A VCE=-5V, IC=-1A VCE=-5V, IC=-1A VCB=-10V, IE=0, f=1MHz VCC=-20V IC=1A=10 IB1=-10 IB2 RL=20 MIN. 60 20 - TYP. 15 300 0.25 0.53 1.61 MAX. -0.1 -0.1 200 -2.5 -1.5 - UNIT mA mA V V MHz pF S 2011. 3. 18 Revision No : 0 1/3 KTB817B 2011. 3. 18 Revision No : 0 2/3 KTB817B 2011. 3. 18 Revision No : 0 3/3 ...