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TC7SH08FE

Toshiba

2-INPUT AND GATE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08FE TC7SH08FE 2 Input AND Gate Features • Super high...


Toshiba

TC7SH08FE

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TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08FE TC7SH08FE 2 Input AND Gate Features Super high speed operation :tPD = 4.3 ns (typ.) @VCC = 5 V Low power dissipation : ICC = 2 µA (Max.) @ Ta = 25°C High noise immunity : VNIH = VNIH = 28% VCC (Min.) 5.5V tolerant input. Wide operation voltage range : VCC (opr) = 2~5.5 V Weight: 0.003 g (typ.) Marking H2 Type name Pin Assignment (top view) IN B 1 IN A 2 GND 3 5 VCC 4 OUT Y Maximum Ratings (Ta = 25°C) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5~7 −0.5~7 −0.5~VCC + 0.5 −20 ±20 ±25 ±50 150 −65~150 1 Unit V V V mA mA mA mA mW °C 2004-02-08 Logic Diagram IN A IN B & Truth Table OUT Y ABY LLL LHL HL L HHH TC7SH08FE Recommended Operating Conditions Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Symbol VCC VIN VOUT Topr dt/dv Rating 2~5.5 0~5.5 0~ VCC −40~85 0~100 ( VCC = 3.3 V ± 0.3 V ) 0~20 ( VCC = 5 V ± 0.5 V ) Unit V V V °C ns/V Electrical Characteristics DC Characteristics Test Characteristics Symbol Circuit High-level input voltage VIH ⎯ Low-level input voltage VIL ⎯ Test Condition ⎯ ⎯ High-level output voltage VOH IOH = −50 µA ⎯ VIN = VIH IOH = −4 mA IOH = −8 mA Low-level output voltage VOL Input l...




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