Reflective Photosensors (Photo Reflectors)
2.0±0.2,,,
CNB1303
Reflective Photosensor
Overview CNB1303 is a small, thi...
Reflective Photosensors (Photo Reflectors)
2.0±0.2,,,
CNB1303
Reflective Photosensor
Overview CNB1303 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si photo
transistor in a single resin package.
Features Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Fast response : tr, tf = 20µs (typ.) Easy interface for control circuit
Applications Control of motor and other rotary units Detection of position and edge Detection of paper, film and cloth Start, end mark detection of magnetic tape
9.0±1.0 2.7±0.2 9.0±1.0 0.4
Mark for indicating emitter side C0.5
13
Chip center
2.0±0.2
Unit : mm
4-0.7 4-0.5 ±0.1
24 1.8
3.4±0.3
0.5 0.15
1.5±0.2
3 41
2
Pin connection
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) VR
3
V
Input (Light
Forward current (DC) emitting diode)
IF
50 mA
Power dissipation
PD*1 75 mW
Collector current
IC 20 mA
Output (Photo Collector to emitter voltage
transistor) Emitter to collector voltage
Collector power dissipation
VCEO VECO PC*2
30 5 50
V V mW
Temperature
Operating ambient temperature Topr –25 to +85 ˚C
Storage temperature
Tstg –30 to +100 ˚C
*1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
...