Document
SEMICONDUCTOR
TECHNICAL DATA
KTA1834D/L
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES Low Collector Saturation Voltage. : VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) Large Collector Current : IC=-10A(dc) IC=-15A(10ms, single pulse) Complementary to KTC5001D/L.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag
Collector Current
Base Current
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP IB
PC
Tj Tstg
RATING -30 -20 -6 -10 -15 -2 1.0 10 150
-55 150
UNIT V V V
A
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_ 0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_ 0.20 0.50 +_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00 +_ 0.10
0.95 MAX
DPAK
Q
AI CJ
BD
H G
FF
123
1. BASE 2. COLLECTOR 3. EMITTER
K E
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2 E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2 J 0.5 +_ 0.1 L K 2.0 +_ 0.2 L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency
ICBO IEBO BVCBO BVCEO BVEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT
Collector Output Capacitance Note : hFE(1) Classification GR:180~390.
Cob
TEST CONDITION VCB=-20V VEB=-5V IC=-50 A IC=-1mA IE=-50 A VCE=-2V, IC=-0.5A VCE=-2V, IC=-4.0A IC=-4.0A, IB=-0.05A IC=-4A, IB=-0.05A VCE=-5V, IE=1.5A, f=50MHz VCB=-10V, IE=0, f=1MHz
IPAK
MIN. -30 -20 -6
180 82 -
TYP. -
-0.16 -0.9 150 220
MAX. -10 -10
390 -
-0.25 -1.2
-
UNIT A A V V V
V V MHz pF
2003. 3. 27
Revision No : 5
1/3
COLLECTOR CURRENT I C (A) Ta=150 C Ta=25 C Ta=-55 C
DC CURRENT GAIN h FE
KTA1834D/L
-10 VCE =-2V
-1
I C - VBE
-0.1
-0.01
-0.001 0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR EMITTER VOLTAGE VBE (V)
1k Ta=25 C
500 300
h FE - I C
VCE =-5V
100
50 30
-0.01
VCE =-2V VCE =-1V
-0.1 -1 -10 -20 COLLECTOR CURRENT IC (A)
2K 1K 500 300
100 50 30
-0.01
h FE - I C
VCE =-2V
Ta=150 C Ta=25 C
Ta=-55 C
-0.1 -1 -10 -20 COLLECTOR CURRENT IC (A)
-1K Ta=25 C
-300
VCE(sat) - I C
-100
-30 I C /I B =80 40
-10 20
-3 -0.01 -0.03 -0.1 -0.3
-1
-3 -10 -20
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN hFE COLLECTOR SATURATION
VOLTAGE VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE VCE(sat) (V) BASE SATURATION VOLTAGE VBE(sat) (mV)
-1K I C /I B =80
-300
VCE(sat) - I C
-100 -30 -10
Ta=-55 C
Ta=25 C Ta=150 C
-3 -0.01
-0.1 -1
-10 -20
COLLECTOR CURRENT IC (A)
2003. 3. 27
Revision No : 5
-1K I C /I B =80
-300
VBE(sat) - I C
-100 -30
Ta=-55 C
Ta=25 C Ta=150 C
-10
-3 -0.01
-0.1 -1
-10 -20
COLLECTOR CURRENT IC (A)
2/3
TRANSITION FREQUENCY f T (MHz)
KTA1834D/L
fT - IE
1k Ta=25 C
500 VCE =-5V f=50MHz
300
100 50 30
10 0.01 0.03 0.1
0.3
1
3
EMITTER CURRENT I E (A)
10
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
C ob - VCE
3K Ta=25 C f=1MHz IE =0A
1K
500
300
100
50 -0.1 -0.3 -1
-3 -10 -30 -100
COLLECTOR-BASE VOLTAGE VCE (V)
EMITTER INPUT CAPACITANCE C ib (pF)
C ib - VEB
10K Ta=25 C
5K f=1MHz 3K I C =0A
1K 500 300
100 -0.05 -0.1 -0.3 -1
-3
BASE-EMITTER VOLTAGE VEB (V)
-10
COLLECTOR POWER DISSIPATION Pc (W)
12 10 1
Pc - Ta
1 Tc=25 C 2 Ta=25 C
8
6
4
2
2
0 0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
2003. 3. 27
Revision No : 5
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
30 I C MAX(PULSE) *
10
3 1 0.3
DC OPERATION Ta=25 C
10mS * 100mS
*
0.1
* SINGLE NONREPETITIVE
0.03
PULSE Tc=25 C CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.01
0.01 0.03 0.1 0.3 1
3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
3/3
.