KTA1759

J B AA E SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC PC* Tj -400 -400 -7 -100 500 1 150 Storage Temperature Range Tstg -55 150 PC* : Mounted on Ceramic Substrate (250 2 0.85) UNIT V V V mA mW W KTA1759 EPITAXIAL PLANAR PNP TRANSISTOR A H DD K FF 123 C G DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut off Current Emitter Cutoff Current DC Current Gain * Collector-Emitter Saturation Voltage * V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)2 Base-Emitter Saturation Voltage * VBE(sat) *Pulse Test : Pulse Width 300 S, Duty Cycle 2% TEST CONDITION IC=-50 A, IE=0 IC=-1mA, IB=0 IE=-50 A, IC=0 VCB=-400V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-10mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA MIN. -400 -400 -7.0 50 - TYP. - MAX. -10 -10 300 -0.5 -1.5 UNIT V V V A A V V 2008. 9. 23 Revision No : 0 1/2 DC CURRENT GAIN hFE KTA1759 hFE - IC 100 30 10 -1 VCE =-10V -3 -10 -3...