KTA1273

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌComplementary to KTC3205. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING -30 -30 -5 -2 2 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 H K L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification 0:100ᴕ200, Y:160ᴕ320 TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-2V, IC=-500mA IC=-1.5A, IB=-0.03A VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz MIN. - -30 -5 100 - TYP. - 120 48 MAX. -100 -100 320 -2.0 -1.0 - UNIT nA nA V V V V MHz pF 1996. 9. 14 Revision No : 1 1/2 KTA127...