KTA1023

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURE Complementary to KTC1027. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING -120 -120 -5 -800 800 1 150 -55 150 UNIT V V V mA mA W O D KTA1023 EPITAXIAL PLANAR PNP TRANSISTOR BD G JA R P DEPTH:0.2 C Q K FF HH M EM 123 HL NN 1. EMITTER 2. COLLECTOR 3. BASE DIM MILLIMETERS A 7.20 MAX B 5.20 MAX S C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 K H L 0.35 MIN 0.75+_ 0.10 M4 N 25 O 1.25 P Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Emitter-Base Breakdwon Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE(Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification O:80 160, Y:120 240 TEST CONDITION VCB=-120V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-5V, IC=-100mA VCB=-10V, IE=0, f=1MHz MIN. - -120 -5 80 - TYP. - 120 - MAX. -100 -100 240 -1.0 -1.0 40 UNIT nA nA V V V V MHz pF 1997. 6. 24 Revision No : 1 1/2 KTA1...