BC817W

BC817W / BC818W NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage BC817W BC818W BC817W BC818W Collector Current Peak Collector Current Peak Base Current Power Dissipation Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Range 1) Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot RθJA TJ Ts Value 50 30 45 25 5 500 1 200 200 625 1) 150 -65 to +150 Unit V V V mA A mA mW K/W OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/02/2006 BC817W / BC818W Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE= 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at IC = 500 mA, VCE = 1 V Collector Cutoff Current at VCB = 20 V at VCB = 20 V, TJ = 150 OC Emitter Cutoff Current at VEB = 5 V Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. -16W -25W...