BC817W

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807W. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current VCBO VCEO VEBO IC IE 50 45 5 500 -500 Collector Power Dissipation PC 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 UNIT V V V mA mA mW A J G BC817W EPITAXIAL PLANAR NPN TRANSISTOR C L E MB 2 1 NK M DIM MILLIMETERS DA B 2.00+_ 0.20 1.25+_ 0.15 C 0.90+_ 0.10 3 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L HM 0.70 0.42 N 0.10 MIN N 1. EMITTER 2. BASE 3. COLLECTOR USM ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT VCB=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=500mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630 MARK SPEC TYPE MARK BC817W-16 2M BC817W-25 2N BC817W-40 2R Marking Type Name MIN. - 100 40 100 - TYP. 5 MAX. 0.1 0.1 630 0.7 1.2 - UNIT A A V V MHz pF Lot No. 2008. 9. 2 Revision No : 0 1/2 BC817W DC CURRENT GAIN h FE 1000 500 300 100 50 3...