BC817A

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 50 45 Emitter-Base Voltage VEBO 5 Collector Current IC 500 Emitter Current IE -500 Collector Power Dissipation PC* 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.9% Alumina 10 8 0.6mm. UNIT V V V mA mA mW BC817A EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT VCB=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=500mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630 MIN. - 100 40 100 - TYP. 5 MAX. 0.1 0.1 630 0.7 1.2 - UNIT A A V V MHz pF MARK SPEC TYPE MARK BC817A-16 2M BC817A-25 2N BC817A-40 2P Marking Type ...